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SH8M70
N-ch
? Electrical characteristic curves
Data Sheet
1000
10000
Ta=25 ° C
1000
V DD =125V
Ciss
1000
V GS =10V
R G =10 Ω
100
tf
Pulsed
100
td(off)
Coss
100
10
td(on)
10
f=1MHz
V GS =0V
Ta=25 ° C
1 Pulsed
0.01 0.1
1
Crss
10
100
1000
10
1
0.01
0.1
1
tr
10
1
0.1
1
Ta=25 ° C
di/dt=100A/ μ s
V GS =0V
Pulsed
10
Drain-Source Voltage : V DS (V)
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
Drain Current : I D (A)
Fig.2 Switching Characteristics
Reverse Drain Current : I DR (A)
Fig.3 Reverse Recovery Time vs.
Reverse Drain Current
15
10
V DS =10V
Pulsed
10
9
Ta=25 ° C
Pulsed
8
10
1
7
6
5
5
Ta=25 ° C
V DD =125V
0.1
Ta=-25 ° C
25 ° C
75 ° C
125 ° C
4
3
2
1.5A
I D =3A
I D =3A
1
0
0
1
2
3
4
Pulsed
5 6 7
0.01
0
2
4
6
8
0
0
5
10
15
20
Total Gate Charge : Qg(nC)
Fig.4 Dynamic Input Characteristics
Gate-Source Voltage : VGS (V)
Fig.5 Typical Transfer
Characteristics
Gate-Source Voltage : V GS (V)
Fig.6 Static Drain-Source On-State
Resistance vs.Gate-Source Voltage
10
V GS =0V
Pulsed
10
V GS =10V
Pulsed
3
V GS =10V
Pulsed
2.5
I D =3.0A
2
1
Ta=-25 ° C
25 ° C
75 ° C
125 ° C
1
Ta=125 ° C
75 ° C
25 ° C
-25 ° C
1.5
1
0.5
1.5A
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0.1
0.1
1
10
0
-50 -25
0
25
50
75 100 125 150
Source-Drain Voltage : V SD (V)
Fig.7 Source Current vs.
Source-Drain Voltage
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Drain Current : I D (A)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current
4/7
Temperature : Tch ( ° C)
Fig.9 Static Drain-Source On-State
Resistance vs. Channel Temperature
2010.06 - Rev.B
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